BS N-channel Enhancement Mode Field Effect Transistor. Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS. BS Transistor Datasheet, BS Equivalent, PDF Data Sheets. Type Designator: BS MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS/D TMOS FET Switching N Channel Enhancement BS October rev 2 16 stbn75f3 stpn75f3 stwn75f3 nchannel 75v 3. Please see the information tables in this datasheet for details. Power mosfet.
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Bs170 fet datasheet filetype pdf
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Previously Viewed Products Select Product Normalized effective transient thermal impedance, junctiontoambient toaa, bs only normalized effective transient thermal impedance t 1 square wave pulse duration sec. Slfsi september revised september xx ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: Parameter symbol maximum units absolute maximum ratings t c25c unless otherwise noted aodaoi pchannel enhancement mode field effect transistor features vds v 40v.
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BS MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Source drain diode symbol parameter test conditions min. June fairchild semiconductor corporation bss rev gw bss nchannel logic level enhancement mode field effect transistor general description.
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Please see the information tables in this datasheet for details. A series positivevoltage regulators slvsj may revised may 2 post office box dallas, texas schematic input output common absolute maximum ratings over virtual junction temperature range unless otherwise noted.
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Bs datasheet, bs datasheets, bs pdf, bs circuit. Bs mmbf nchannel enhancement mode field effect transistor fairchild semiconductor corporation.
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BS Single N-Channel Small Signal MOSFET 60V, mA, 5Ω
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October rev 2 16 stbn75f3 stpn75f3 stwn75f3 nchannel 75v 3. July 20 diodes incorporated 2n nchannel enhancement mode.